9 with NMOS, current flows from Drain-to-source (arrow points away from device at the Source) with PMOS, current flows from Source-to-drain (arrow points to the device at the Source) P-channel refers to the type of channel that forms underneath the "gate".
.model myNMOS NMOS(Kp=100u Vto=0.5 Lambda=0) You can do a similar thing for PMOS, except you would give it a Vto value that is negative. Now here is the part that is not in the built-in help. Since it sounds like you are doing IC design, you want to use the nmos4 and pmos4 built-in LTspice symbols. These do two things for you.
I am researching the mode of operation on PMOS and NMOS using Level 1 standard parameters. This is the information of the NMOS circuit to be designed. Using transistor model level 1 parameters, cal...
1 I have a a question on forming of the inversion layer in NMOS. More specifically, please refer to the following figures The negative ions (in-mobile) are due to the the accumulation of the positive charges at the gate metal plate that pushes the holes (mobile carriers) downward. This is the first figure.
In an actual device using NMOS high-side FETs there's a trick to dealing with this issue: use a bootstrap voltage generator to make the high-side gate driver supply.
The NMOS will leave saturation when Vout < Vin - VTN. It depends on the geometry and the parameters which case occurs first, but at some point the NMOS will leave saturation and the curve will flatten out.
Here is the NMOS for a NAND GATE, where Z indicates that it's in a floating state, the bold blue line indicates that the source-drain is set to High, the bold black line indicates that the source-drain is set to Low: I'll explain my understanding using the first image, with both gates set to Low.
The NMOS transistors are unnecessary if you want to implement some sort of current-mode logic where absence of current is a logical zero. If you want to implement voltage-level logic, like typical CMOS or TTL, you'll need an active element to drive the zero voltage. A floating output is indeterminate, and the voltage will depend purely on the loads and will often not be what you want, so that ...
Is it possible to use an NMOS as a highside switch ? what are the disadvantages? In my circuit i have a Reverse voltag protection IC that controls an NMOS on the highside.
