When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

As technology advances, power dissipation has now become the number one challenge facing today’s chip designers. Total power consumption consists of two parts - dynamic power and leakage power.

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...

I was testing a circuit and found many discrepancies from the paper design I used to create it. The dynamics of the circuit were a bit unexpected, andthe noise level was much larger than required. I ...

At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...

What Is A Semiconductor Gate? The gate electrode is a thin film of a conductive material deposited on top of an insulator layer in a transistor. The gate sits above a channel formed in the main body ...