The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D and E, HF and RF applications at up to 30 MHz, as well as other applications. The ...

SEMICON West was held last week in San Francisco and I had the opportunity to attend the Emerging Architectures session. Serge Biesemans, vice president of process technology at Imec, gave a nice ...

Diamond CMOS needs symmetrical doping control like we have for semiconductor silicon and diamond n-MOS is needed. The n-channel diamond MOSFETs are demonstrated. This work will enable the development ...

Traditionally, the depletion MOSFET was classified as a linear device because the conduction channel between source and drain could not be pinched off and was thus unqualified for digital switching.

Improved bonding technology helped Toshiba and IBM Corp. develop a higher performance CMOS FET. CMOS has traditionally played a central role in semiconductor design, a position now under threat as ...

Semiconductor Research Corporation (SRC) in the US has recruited semiconductor technology expert Dr Jeffrey Welser to direct the Nanotechnology Research Initiative (NRI). “Under his direction, ...

IBM revealed vertical FET CMOS logic at a sub-45nm gate pitch on bulk silicon wafers at the IEEE International electron devices meeting in San Francisco this week. IBM’s VTFET with a vertical channel ...

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in ...

Texas Instrument's Richard Zarr reviews the differences between Silicon-Germanium BiCMOS and small-geometry CMOS when it comes to driving high-speed data transmission lines. The CMOS process was the ...