On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...

In 2015, researchers reported a surprising discovery that stoked industry-wide security concerns—an attack called RowHammer that could corrupt, modify, or steal sensitive data when a simple user-level ...

DRAM manufacturers continue to demand cost-effective solutions for screening and process improvement amid growing concerns over defects and process variability, but meeting that demand is becoming ...

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...

Machine learning (ML), a subset of artificial intelligence (AI), has become integral to our lives. It allows us to learn and reason from data using techniques such as deep neural network algorithms.