This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

After lying dormant in research laboratories for decades, silicon carbide (SiC) is beginning to realize its potential as a substrate material. [Transistor After lying dormant in research laboratories ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

As active devices go, it doesn’t get much simpler than a diode. Two terminals. Current flows in one direction and not in the other. Simple, right? Well, then there are examples with useful side ...

Diodes has announced silicon carbide Schottky diodes rated at 650V and 1.2kV, the company’s first SiC Schottkys. The DSCxxA065 series has eleven 650V diodes rated at 4, 6, 8 or 10A. The DSCxx120 ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

Unter idealen Bedingungen betrieben, kann eine Diode bis zu zwei Billionen Mal pro Sekunde umgeladen werden – schneller ist es bislang in konventionellen Hochfrequenz-Schaltkreisen nicht möglich. Bis ...

The history of the diode is a fun one as it’s rife with accidental discoveries, sometimes having to wait decades for a use for what was found. Two examples of that are our first two topics: thermionic ...