A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
A review paper by scientists at Beijing Institute of Graphic Communication presented  a thorough review of the existing research landscape, encapsulating the notable progress in swiftly expanding ...
OFET incorporating the CdSe quantum dot film used in this study. (Courtesy: J Jang) Photoresponsive flash memories made from organic field-effect transistors (OFETs) that can be quickly erased using ...
Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...
Low-voltage and low-power circuit structures are substantive for almost all mobile electronic gadgets which generally have mixed mode circuit structures embedded with analog sub-sections. Using the ...
Many applications need to archive data or retain system information after power-down. These tasks fall to nonvolatile memory that must be in-circuit writable at least once, and often many times.
The memory industry has crammed more and more memory bits onto ever smaller die and is selling those slivers of silicon for a few cents each. Currently, 1-Gbit and even 4-Gbit DRAMs (dynamic ...