GaN and its related alloys have been used in a variety of light-emitting devices and electron devices on a commercial basis. Nevertheless, more technological innovations are needed to realize ...

JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development ...

Last week, an international group of researchers shed light on oxygen's role in enhancing red LEDs and reported that the quantity and location of oxygen in gallium nitride (GaN) can be fine-tuned to ...

In a recent research paper, Graphenea demonstrated the use of graphene as an intermediary layer to grow GaN-on-silicon devices. Semiconductors fabricated from third-group periodic table elements and ...