Masaharu Kobayashi of Tokyo University has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than ...
image: Scientists at Tokyo Institute of Technology have demonstrated the potential of a new, thin-film ferroelectric material that could improve the performance of next-generation sensors and ...
Material development for semiconductor and thin film materials requires a full understanding of the material characteristics and how they impact each other. The Thermo Scientific™ Nexsa™ XPS System ...
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