In 5nm and 7nm nodes, the source/drain contact area of the transistors is so small that the contact resistance threatens to result in suboptimal transistor functioning. Researchers have therefore been ...
Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE ...
PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
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