(Nanowerk News) IBM scientists in Zurich and Yorktown Heights, New York have unveiled a breakthrough approach in two publications for growing and integrating nano-sized III-V semiconductor devices on ...

LONDON — STMicroelectronics and Taiwan Semiconductor Manufacturing Co. (TSMC) are each ready to move their respective silicon germanium (SiGe) process technology into volume production. By bolting ...

At first glance, other semiconductors always have looked more attractive to device designers than silicon. Both germanium and III-V compound semiconductors have higher carrier mobility, allowing ...

WASHINGTON, D.C., June 8, 2015 -- A team of IBM researchers in Zurich, Switzerland with support from colleagues in Yorktown Heights, New York has developed a relatively simple, robust and versatile ...

What will replace silicon and when will it happen? There are no simple answers, but something has to be done. Chipmakers are making a giant leap from planar transistors to finFETs. Initially, Intel ...