A new way to switch transistors could overcome the power consumption and undesirable current leakage problems encountered in conventional nanoscale field-effect devices. The new technique, which works ...
Researchers from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences have developed an innovative ...
A new atomically-thick strain sensor is 100 times more sensitive than commercial devices and 10 times more sensitive than alternative versions based on graphene. According to its developers at China’s ...