Vishay Intertechnology Inc. recently introduced 28 new 600 V and 650 V FRED Pt Gen 4 Ultrafast recovery diodes optimized for high-frequency converters in power modules, motor drives, UPS, solar ...
The relentless trend towards lower voltage, higher current and faster load slew rate poses a constant challenge for power supply designers. A decade ago, a typical power supply would have 5V and +/- ...
The previous column in this series discussed driver and layout considerations to improve the performance achievable with eGaN FETs. In this installment the optimum layout will be implemented in a high ...
Significant efforts have been made to show the performance improvements achievable with eGaN® FETs over silicon MOSFETs in both hard and soft switching applications. This volume of the eGaN ...
Designed to increase efficiency in motor drives, UPS, solar inverters, and welding machine inverters, the Vishay Semiconductors devices, provided as bare die, offer low collector-to-emitter voltages ...
Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...
onsemi has brought out a range of 1200V insulated-IGBTs that minimize conduction and switching losses. Intended to enhance efficiency in fast switching applications, the new devices will be primarily ...
Zetex has announced a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 ‘zero point detector driver’ replaces Schottky and other diodes to ...
The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...
Diodes has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Diodes unveils new SiC Schottky diodes ...
Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...
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